complementary silicon plastic power transistors . . . designed for use in generalpurpose amplifier and switching applications. ? dc current gain specified to 10 amperes ? high current gain e bandwidth product e f t = 2.0 mhz (min) @ i c = 500 madc ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 60 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 70 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 5.0 ??? ??? vdc ???????????? ???????????? collector current ????? ????? i c ?????? ?????? 10 ??? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 6.0 ??? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c mje3055t, mje2955t ????? ? ??? ? ????? p d 2 ?????? ? ???? ? ?????? 75 0.6 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 55 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 1.67 ??? ??? c/w 2safe area curves are indicated by figure 1. both limits are applicable and must be observed. 10 5.0 figure 1. activeregion safe operating area v ce , collector-emitter voltage (volts) 5.0 2.0 1.0 0.2 0.1 20 30 second breakdown limited bonding wire limited thermally limited t c = 25 c (d = 0.1) i c , collector current (amp) dc 7.0 10 5.0 ms 1.0ms 50 60 0.5 7.0 3.0 0.7 0.3 t j = 150 c 100 m s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on t j(pk) = 150 c. t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. (see an415a) preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 4 1 publication order number: mje2955t/d mje2955t mje3055t 10 ampere complementary silicon power transistors 60 volts 75 watts *on semiconductor preferred device * pnp npn * case 221a09 to220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
mje2955t mje3055t http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 200 madc, i b = 0) ????? ????? v ceo(sus) ??? ??? 60 ???? ???? e ??? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 700 ??? ??? m adc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 70 vdc, v eb(off) = 1.5 vdc) (v ce = 70 vdc, v eb(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 1.0 5.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 70 vdc, i e = 0) (v cb = 70 vdc, i e = 0, t c = 150 c) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.0 10 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 5.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (1) (i c = 4.0 adc, v ce = 4 0 vdc) (i c = 10 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 20 5.0 ???? ? ?? ? ???? 100 e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (1) (i c = 4.0 adc, i b = 0.4 adc) (i c = 10 adc, i b = 3.3 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.1 8.0 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (1) (i c = 4.0 adc, v ce = 4.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 1.8 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? currentgainbandwidth product (i c = 500 madc, v ce = 10 vdc, f = 500 khz) ????? ????? f t ??? ??? 2.0 ???? ???? e ??? ??? mhz (1) pulse test: pulse width 300 m s, duty cycle 20%.
mje2955t mje3055t http://onsemi.com 3 0 t c , case temperature ( c) 75 100 175 25 50 figure 2. dc current gain 125 150 500 0.01 figure 3. power derating i c , collector current (amp) 5.0 0.02 0.05 0.1 0.2 1.0 2.0 10 0.5 300 200 100 50 30 90 0 80 60 40 70 50 h fe , dc current gain 20 10 5.0 t j = 150 c 25 c -55 c v ce = 2.0 v p d , power dissipation (watts) 30 10 20 mje3055t mje2955t 0.1 i c , collector current (amp) 0.5 1.0 10 0.2 0.3 2.0 3.0 figure 4. aono voltages 2.0 0 1.6 1.2 0.8 v, voltage (volts) 0.4 5.0 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 3.0 v v ce(sat) @ i c /i b = 10 mje2955t 0.1 i c , collector current (amp) 0.5 1.0 10 0.2 0.3 2.0 3.0 1.4 0 1.2 1.0 0.8 v, voltage (volts) 0.4 5.0 t j = 25 c v be(sat) @ i c /i b = 10 v be @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 mje3055t 0.6 0.2
mje2955t mje3055t http://onsemi.com 4 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje2955t/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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